一种低压低温度系数的带隙基准电路.doc
约5页DOC格式手机打开展开
一种低压低温度系数的带隙基准电路,全文5页约2300字 论述翔实 图文并茂摘要：本文介绍了一种工作在3.3v电压下，适合于标准bicmos工艺的带隙基准电路。传统的带隙基准电路是利用三极管的短接电压vbe与热电压vt和kt/q乘积的和产生的。因此，vref大约为1.25v，这就限制了低于1v的带隙输出电压。本文介绍的带隙...
内容介绍
此文档由会员 痴狂少年 发布
一种低压低温度系数的带隙基准电路
全文5页约2300字 论述翔实 图文并茂
摘要：本文介绍了一种工作在3.3V电压下，适合于标准BiCMOS工艺的带隙基准电路。传统的带隙基准电路是利用三极管的短接电压VBE与热电压VT和kT/q乘积的和产生的。因此，VREF大约为1.25V，这就限制了低于1V的带隙输出电压。本文介绍的带隙基准电路输出电压大约为695mV，并且可以很方便的减小或者增大输出电压。电路的输出电压在190°C的温度范围内的变化值只有1.5mV，它的温度系数大约只有8ppm/°C。
关键字：带隙基准，低压，低温度系数
A Low Voltage Low Temperature Coefficient Bandgap Reference
Zhang Fengjiang 1 , 2 ,Zhang Hong1 , 2 ,Zhang Zhengfan 3
(1. Chongqing University of Posts and Telecommunications, Chongqing 400065; 2. National Laboratory of Analog IC, Chongqing 400060; 3. Sichuan Institute of Solid-State Circuits, Chongqing 400060; )
Abstract： A CMOS bandgap reference(BGR) circuit which can successfully operate with 3.3V supply and is compatible with a standard BiCMOS process is described in this paper. In the conventional BGR circuit, the output voltage VREF is the sum of the built-in voltage of the diode VBE and the thermal voltage VT of kT/q multiplied by a constant. Therefore, VREF is about1.25 V, which limits a low supply-voltage operation below 1 V. The reference voltage is about 695 mV and it can simply be adjusted to higher reference voltages. And the circuit demonstrates a variation of 1.5mV over 190°C and has a temperature coefficient of 8ppm/°C.
Keywords: bandgap reference(BGR) ,low voltage , low temperature coefficient
全文5页约2300字 论述翔实 图文并茂
摘要：本文介绍了一种工作在3.3V电压下，适合于标准BiCMOS工艺的带隙基准电路。传统的带隙基准电路是利用三极管的短接电压VBE与热电压VT和kT/q乘积的和产生的。因此，VREF大约为1.25V，这就限制了低于1V的带隙输出电压。本文介绍的带隙基准电路输出电压大约为695mV，并且可以很方便的减小或者增大输出电压。电路的输出电压在190°C的温度范围内的变化值只有1.5mV，它的温度系数大约只有8ppm/°C。
关键字：带隙基准，低压，低温度系数
A Low Voltage Low Temperature Coefficient Bandgap Reference
Zhang Fengjiang 1 , 2 ,Zhang Hong1 , 2 ,Zhang Zhengfan 3
(1. Chongqing University of Posts and Telecommunications, Chongqing 400065; 2. National Laboratory of Analog IC, Chongqing 400060; 3. Sichuan Institute of Solid-State Circuits, Chongqing 400060; )
Abstract： A CMOS bandgap reference(BGR) circuit which can successfully operate with 3.3V supply and is compatible with a standard BiCMOS process is described in this paper. In the conventional BGR circuit, the output voltage VREF is the sum of the built-in voltage of the diode VBE and the thermal voltage VT of kT/q multiplied by a constant. Therefore, VREF is about1.25 V, which limits a low supply-voltage operation below 1 V. The reference voltage is about 695 mV and it can simply be adjusted to higher reference voltages. And the circuit demonstrates a variation of 1.5mV over 190°C and has a temperature coefficient of 8ppm/°C.
Keywords: bandgap reference(BGR) ,low voltage , low temperature coefficient
