硅片表面损伤层的显微观察.zip
硅片表面损伤层的显微观察,包括开题报告，任务书，ppt，翻译原文和译文摘要iabstractii1.引言11.1对硅片表面损伤层进行显微观察研究的意义11.2国内外研究历史与现状21.3 本课题研究内容81.4 本课题研究方案82.实验方法92.1实验设备及材料92.2实验步骤92.2.1硅片的选取92.2.2 硅片的清洗92.2.3硅样品的表...
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内容介绍
原文档由会员 牛奶咖啡 发布
包括开题报告，任务书，ppt，翻译原文和译文
摘要 I
Abstract II
1.引言 1
1.1对硅片表面损伤层进行显微观察研究的意义 1
1.2国内外研究历史与现状 2
1.3 本课题研究内容 8
1.4 本课题研究方案 8
2.实验方法 9
2.1实验设备及材料 9
2.2实验步骤 9
2.2.1硅片的选取 9
2.2.2 硅片的清洗 9
2.2.3硅样品的表面形貌的金相显微观察 11
2.2.4 硅样品表面形貌的扫描电镜显微观察 12
2.2.5 比较人工机械刻划与金刚石线锯切割对硅片表面造成的损伤 13
3.结果与讨论 15
3.1 硅片样品表面形貌的金相显微图 15
3.1.1 硅样品的金相显微观察图 15
3.1.2 化学腐蚀前后硅片表面损伤层形貌的显微观察 16
3.1.4物理抛光前后硅片表面损伤层形貌的显微观察 16
3.2 硅片表面形貌的扫描电镜观测图片 16
3.3人工刻划与金刚石线锯切割对硅片表面造成损伤的形貌对比观察 20
3.4 表面被刻划的硅片在扫描电子显微镜下观察到的形貌 21
4.结论 29
参考文献 30
致谢 31
硅片表面损伤层的显微观察
摘要
近年来，随着晶体硅在半导体、太阳能电池等领域越来越广泛的应用，我们对晶体硅片表面质量和电学性能的要求也不断提高。晶体硅是太阳能电池的主要部件，其性能的好坏将直接影响电池的光电转换效率。传统的晶体硅片的加工工艺已经开始不能满足各个领域对晶体硅高性能的要求了。因此，如何深入的研究硅片表面的损伤就十分重要了。本实验主要是对表面具有一定损伤的硅片进行显微形貌观察分析，通过金相显微电镜、扫描电镜对硅片表面形貌进行观察。实验中还比较了人工刻划与线锯切割对硅片表面造成损伤的不同，最后在扫描电镜下观察被人工刻划的硅片表面的形貌。实验结果表明，在经过线锯切割过程后，硅片表面微观形貌呈现部分沟槽、断续划痕、凹坑等缺陷。人工刻划对硅片表面产生划痕损伤是间断不连续的。在扫描电镜下观察到划痕是由一些间断的、较规则排列的沟壑状损伤组成。
关键词: 硅片；损伤层；金相显微观察；扫描电镜；表面形貌；刻划
Silicon wafer surface layer damage of microscopic observation
Abstract
In recent years, with crystalline silicon in fields such as semiconductors, solar cells, more and more widely used, our requirements to crystal silicon wafer surface quality and electrical performance are constantly improving.Crystalline silicon is the main components of solar cells, its performance is good or bad will directly affect the photoelectric conversion efficiency of the battery. Traditional crystalline silicon processing technology already cannot satisfy the requirement of every field of crystalline silicon high-performance. Therefore, how to study of the damage on the surface of the silicon wafer in depth are becoming more and more important. This experiment is mainly to take a microstructure morphology observation analysis with the surface of the silicon which have certain damage. Through Metallographic microscope and Scanning electron microscopy (SEM) of silicon wafer surface morphology to observate. Experiment also compared the artificial scored with wire sawing damage on the wafer surface in different. Experimental results show that, after a diamond wire saw cutting process, the wafer surface morphology showing part of the trench, intermittent scratches, pits and other defects. Artificial scored on the wafer surface scratches injury time off is not continuous. Observed in the scanning electron microscope, the silicon surface scratches by some intermittent, with regular arrangement of the gully-like damage components.
Key words：Silicon wafer ；Damage layer ；Metallographic microscopic observation
Scanning electron microscopy；Surface morphology；Score
摘要 I
Abstract II
1.引言 1
1.1对硅片表面损伤层进行显微观察研究的意义 1
1.2国内外研究历史与现状 2
1.3 本课题研究内容 8
1.4 本课题研究方案 8
2.实验方法 9
2.1实验设备及材料 9
2.2实验步骤 9
2.2.1硅片的选取 9
2.2.2 硅片的清洗 9
2.2.3硅样品的表面形貌的金相显微观察 11
2.2.4 硅样品表面形貌的扫描电镜显微观察 12
2.2.5 比较人工机械刻划与金刚石线锯切割对硅片表面造成的损伤 13
3.结果与讨论 15
3.1 硅片样品表面形貌的金相显微图 15
3.1.1 硅样品的金相显微观察图 15
3.1.2 化学腐蚀前后硅片表面损伤层形貌的显微观察 16
3.1.4物理抛光前后硅片表面损伤层形貌的显微观察 16
3.2 硅片表面形貌的扫描电镜观测图片 16
3.3人工刻划与金刚石线锯切割对硅片表面造成损伤的形貌对比观察 20
3.4 表面被刻划的硅片在扫描电子显微镜下观察到的形貌 21
4.结论 29
参考文献 30
致谢 31
硅片表面损伤层的显微观察
摘要
近年来，随着晶体硅在半导体、太阳能电池等领域越来越广泛的应用，我们对晶体硅片表面质量和电学性能的要求也不断提高。晶体硅是太阳能电池的主要部件，其性能的好坏将直接影响电池的光电转换效率。传统的晶体硅片的加工工艺已经开始不能满足各个领域对晶体硅高性能的要求了。因此，如何深入的研究硅片表面的损伤就十分重要了。本实验主要是对表面具有一定损伤的硅片进行显微形貌观察分析，通过金相显微电镜、扫描电镜对硅片表面形貌进行观察。实验中还比较了人工刻划与线锯切割对硅片表面造成损伤的不同，最后在扫描电镜下观察被人工刻划的硅片表面的形貌。实验结果表明，在经过线锯切割过程后，硅片表面微观形貌呈现部分沟槽、断续划痕、凹坑等缺陷。人工刻划对硅片表面产生划痕损伤是间断不连续的。在扫描电镜下观察到划痕是由一些间断的、较规则排列的沟壑状损伤组成。
关键词: 硅片；损伤层；金相显微观察；扫描电镜；表面形貌；刻划
Silicon wafer surface layer damage of microscopic observation
Abstract
In recent years, with crystalline silicon in fields such as semiconductors, solar cells, more and more widely used, our requirements to crystal silicon wafer surface quality and electrical performance are constantly improving.Crystalline silicon is the main components of solar cells, its performance is good or bad will directly affect the photoelectric conversion efficiency of the battery. Traditional crystalline silicon processing technology already cannot satisfy the requirement of every field of crystalline silicon high-performance. Therefore, how to study of the damage on the surface of the silicon wafer in depth are becoming more and more important. This experiment is mainly to take a microstructure morphology observation analysis with the surface of the silicon which have certain damage. Through Metallographic microscope and Scanning electron microscopy (SEM) of silicon wafer surface morphology to observate. Experiment also compared the artificial scored with wire sawing damage on the wafer surface in different. Experimental results show that, after a diamond wire saw cutting process, the wafer surface morphology showing part of the trench, intermittent scratches, pits and other defects. Artificial scored on the wafer surface scratches injury time off is not continuous. Observed in the scanning electron microscope, the silicon surface scratches by some intermittent, with regular arrangement of the gully-like damage components.
Key words：Silicon wafer ；Damage layer ；Metallographic microscopic observation
Scanning electron microscopy；Surface morphology；Score
