快速晶化法制备n型晶硅薄膜.zip
快速晶化法制备n型晶硅薄膜,包括开题报告，任务书，ppt，翻译原文和译文摘 要iabstractii1 引言11.1太阳能电池的发展概述11.2氢化非晶硅薄膜发展概述21.3氢化非晶硅薄膜的亚稳性31.4氢化非晶硅薄膜常用的制备方法31.5固相晶化技术(spc)41.6快速热处理（rtp）42 实 验62.1实验材料62.2薄膜的制备62.3薄膜...
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包括开题报告，任务书，ppt，翻译原文和译文
摘 要 I
Abstract II
1 引 言 1
1.1太阳能电池的发展概述 1
1.2氢化非晶硅薄膜发展概述 2
1.3氢化非晶硅薄膜的亚稳性 3
1.4氢化非晶硅薄膜常用的制备方法 3
1.5固相晶化技术(SPC) 4
1.6快速热处理（RTP） 4
2 实 验 6
2.1实验材料 6
2.2薄膜的制备 6
2.3薄膜样品的快速热处理 7
2.4制备薄膜试样的表征 8
3 结果与讨论 10
3.1退火温度对氢化非晶硅薄膜的电阻率影 12
3.2退火时间对氢化非晶硅薄膜的电阻率影响 15
4结 论 17
参考文献 18
致 谢 20
快速晶化法制备n型晶硅薄膜
摘 要
本论文首先论述了为什么要对氢化非晶薄膜进行固相晶化，通过采用了PECVD在石英衬底上制备磷元素掺杂的n型非晶硅薄膜，采用高温快速热处理方法进行处理，采用四探针对薄膜试样前后的电阻进行测试，采用椭偏仪对薄膜试样热处理后的膜厚进行测试。通过对热处理前后的薄膜试样的电阻率进行比较，通过控制退火温度与退火时间来获得的低电阻率的薄膜试样最佳工艺。因此，本论文特别对薄膜热处理前后的电阻率变化进行了详细的分析。
通过实验的数据，我们明显可以发现经过高温热处理后的薄膜试样的电阻率变小了很多：薄膜式样的电阻率变化率随着退火温度升高而增大，退火时间从10s到20s时，薄膜试样的电阻率的变化率增大。其中经过20s与1000℃热处理前的电阻率是热处理后的8000倍。随着退火温度的升高，热处理前后的薄膜试样电阻率变化率增大。
关键词：n型非晶硅薄膜 ;快速热处理；固相晶化;电阻率； 膜厚
Rapid thermal processing on n-type crystalline silicon thin film
Abstract
In this paper, firstly, Why should the solid phase crystallization of hydrogenated amorphous silicon thin film thin. Then, a-Si:H films were prepared on qurtz substrates by PECVDT。he effect of rapid thermal processing on the samples were studied,Resistance of thin film samples before and after the annealing process were test by four probe method. Ellip sometry were used to test the thickness, the comparison of the resistivity of the films before and after heat treatment,By controlling the annealing temperature and time to obtain the low resistivity of thin film samples the best process。Therefore, the thesis particularly change of resistivity of the films are analyzed in detail.
According to the data, it can be found that the resistivity of thin film samples decreased heavily after heat treatment, The change of resistivity film style ratio increases with the increase of annealing temperature。The annealing time from 10s to 20s, the change of resistivity of the film sample rate。before the heat treatment is 8000 times after at 20s and 1000℃ heat treatment。As the processing temperature increases, the rate of the resistivities of the samples before and after heat treatment changes increases。
Key words：N type amorphous silicon thin film;rapid thermal processing; Solid phase crystallization；resistivity;thickness
摘 要 I
Abstract II
1 引 言 1
1.1太阳能电池的发展概述 1
1.2氢化非晶硅薄膜发展概述 2
1.3氢化非晶硅薄膜的亚稳性 3
1.4氢化非晶硅薄膜常用的制备方法 3
1.5固相晶化技术(SPC) 4
1.6快速热处理（RTP） 4
2 实 验 6
2.1实验材料 6
2.2薄膜的制备 6
2.3薄膜样品的快速热处理 7
2.4制备薄膜试样的表征 8
3 结果与讨论 10
3.1退火温度对氢化非晶硅薄膜的电阻率影 12
3.2退火时间对氢化非晶硅薄膜的电阻率影响 15
4结 论 17
参考文献 18
致 谢 20
快速晶化法制备n型晶硅薄膜
摘 要
本论文首先论述了为什么要对氢化非晶薄膜进行固相晶化，通过采用了PECVD在石英衬底上制备磷元素掺杂的n型非晶硅薄膜，采用高温快速热处理方法进行处理，采用四探针对薄膜试样前后的电阻进行测试，采用椭偏仪对薄膜试样热处理后的膜厚进行测试。通过对热处理前后的薄膜试样的电阻率进行比较，通过控制退火温度与退火时间来获得的低电阻率的薄膜试样最佳工艺。因此，本论文特别对薄膜热处理前后的电阻率变化进行了详细的分析。
通过实验的数据，我们明显可以发现经过高温热处理后的薄膜试样的电阻率变小了很多：薄膜式样的电阻率变化率随着退火温度升高而增大，退火时间从10s到20s时，薄膜试样的电阻率的变化率增大。其中经过20s与1000℃热处理前的电阻率是热处理后的8000倍。随着退火温度的升高，热处理前后的薄膜试样电阻率变化率增大。
关键词：n型非晶硅薄膜 ;快速热处理；固相晶化;电阻率； 膜厚
Rapid thermal processing on n-type crystalline silicon thin film
Abstract
In this paper, firstly, Why should the solid phase crystallization of hydrogenated amorphous silicon thin film thin. Then, a-Si:H films were prepared on qurtz substrates by PECVDT。he effect of rapid thermal processing on the samples were studied,Resistance of thin film samples before and after the annealing process were test by four probe method. Ellip sometry were used to test the thickness, the comparison of the resistivity of the films before and after heat treatment,By controlling the annealing temperature and time to obtain the low resistivity of thin film samples the best process。Therefore, the thesis particularly change of resistivity of the films are analyzed in detail.
According to the data, it can be found that the resistivity of thin film samples decreased heavily after heat treatment, The change of resistivity film style ratio increases with the increase of annealing temperature。The annealing time from 10s to 20s, the change of resistivity of the film sample rate。before the heat treatment is 8000 times after at 20s and 1000℃ heat treatment。As the processing temperature increases, the rate of the resistivities of the samples before and after heat treatment changes increases。
Key words：N type amorphous silicon thin film;rapid thermal processing; Solid phase crystallization；resistivity;thickness
