通过硅掺杂提高inas和gaas量子点电池的光电转换效率[外文翻译].zip
通过硅掺杂提高inas和gaas量子点电池的光电转换效率[外文翻译],材料科学与工程 材料物理与化学，外文文献翻译及原文improved efficiency of inas/gaas quantum dots solar cells by si-doping通过硅掺杂提高inas和gaas量子点电池的光电转换效率a b s t r a c tthis paper reports on ...
该文档为压缩文件,包含的文件列表如下:
内容介绍
原文档由会员 牛奶咖啡 发布
材料科学与工程 材料物理与化学，外文文献翻译及原文
Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping
通过硅掺杂提高InAs和GaAs量子点电池的光电转换效率
a b s t r a c t
This paper reports on significantly improved efficiency of InAs/GaAs quantum dot (QD) solar cells bydirectly doping Si into InAs QDs during the QD growth. The devices which contain five stacked QDs intheir i-regions were grown using molecular beam epitaxy. It is shown that using appropriate Si-doing,the open-circuit voltage of the device can be increased to 0.84 V. This is dramatically higher than theva lue of 0.67 V obtained in undoped device using the same structure. Moreover, the efficiency ofcorresponding device is improved from 11.3% to 17.0%. This improvement in efficiency is attributed togreatly reduced energy loss in the devices that results from the reduction of the defect density in thestacked InAs/GaAs QD layers due to the doping.
本文主要探讨在电砷化镓量子点太阳能电池池中量子点增长的过程中直接掺杂硅量子点来显着提高工作效率的重要意义。这个设备包含五个堆叠在i地区的量子点是用分子束外延生长。它显示出使用适当的硅做的开路电压的设备可以提高到0.84 V.这是显着高于未掺杂的移动设备使用相同的结构中得到的值的0.67 V。此外，相应的移动设备的效率从11.3％提高至17.0％。这种效率的改进是由于大大降低能量损失的设备中的缺陷密度减少的结果，由于掺杂在堆叠的砷化铟/砷化镓量子点层中掺杂了硅的原因。
Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping
通过硅掺杂提高InAs和GaAs量子点电池的光电转换效率
a b s t r a c t
This paper reports on significantly improved efficiency of InAs/GaAs quantum dot (QD) solar cells bydirectly doping Si into InAs QDs during the QD growth. The devices which contain five stacked QDs intheir i-regions were grown using molecular beam epitaxy. It is shown that using appropriate Si-doing,the open-circuit voltage of the device can be increased to 0.84 V. This is dramatically higher than theva lue of 0.67 V obtained in undoped device using the same structure. Moreover, the efficiency ofcorresponding device is improved from 11.3% to 17.0%. This improvement in efficiency is attributed togreatly reduced energy loss in the devices that results from the reduction of the defect density in thestacked InAs/GaAs QD layers due to the doping.
本文主要探讨在电砷化镓量子点太阳能电池池中量子点增长的过程中直接掺杂硅量子点来显着提高工作效率的重要意义。这个设备包含五个堆叠在i地区的量子点是用分子束外延生长。它显示出使用适当的硅做的开路电压的设备可以提高到0.84 V.这是显着高于未掺杂的移动设备使用相同的结构中得到的值的0.67 V。此外，相应的移动设备的效率从11.3％提高至17.0％。这种效率的改进是由于大大降低能量损失的设备中的缺陷密度减少的结果，由于掺杂在堆叠的砷化铟/砷化镓量子点层中掺杂了硅的原因。
