退火处理对al掺杂zno薄膜的结构，光学和电学性质的影响[外文翻译].zip
退火处理对al掺杂zno薄膜的结构，光学和电学性质的影响[外文翻译],材料科学与工程 材料物理与化学，外文文献翻译及原文中文3065字effect of annealing treatment on the structural, optical, and electricalproperties of al-doped zno thin films退火处理对al掺杂zno薄膜的结构，光...
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材料科学与工程 材料物理与化学，外文文献翻译及原文
中文3065字
Effect of annealing treatment on the structural, optical, and electricalproperties of Al-doped ZnO thin films
退火处理对Al掺杂ZnO薄膜的结构，光学和电学性质的影响
Abstract:
Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containingAl (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The structural, optical, andelectrical properties of AZO films as-deposited and submitted to annealing treatment (at 300 and 400°C, respectively) werecharacterized using various techniques. The experimental results show that the properties of AZO thin films can be furtherimproved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances ofthe AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, re-spectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as8.06 × 10 4 cm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sput-tering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.
摘要：由直流（dc）和射频（rf)磁控溅射方式制作的含有锌目标al（1.5%含量）的高导电性和透明的掺杂zno（azo)薄膜。使用不同的技术，azo薄膜的结构，光学和电学性能在不同温度的退火处理（300和400℃下）显示不同的特征。实验 结果表明，AZO薄膜的性能可以通过退火处理进一步提高。经退火处理后ZnO薄膜的结晶性提高。直流与射频（RF）磁控溅射制备的AZO薄膜在可见光区域的透射率分别是80%和85%。直流磁控溅射制备AZO薄膜的电阻率在经过退火处理火可低至8.06×10-4Ω⋅cm。有人还发现，射频反应磁控溅射制备的AZO薄膜比直流磁控溅射的有更好的结构性和光学性
中文3065字
Effect of annealing treatment on the structural, optical, and electricalproperties of Al-doped ZnO thin films
退火处理对Al掺杂ZnO薄膜的结构，光学和电学性质的影响
Abstract:
Highly conductive and transparent Al-doped ZnO (AZO) thin films were prepared from a zinc target containingAl (1.5 wt.%) by direct current (DC) and radio frequency (RF) reactive magnetron sputtering. The structural, optical, andelectrical properties of AZO films as-deposited and submitted to annealing treatment (at 300 and 400°C, respectively) werecharacterized using various techniques. The experimental results show that the properties of AZO thin films can be furtherimproved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances ofthe AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, re-spectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as8.06 × 10 4 cm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sput-tering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.
摘要：由直流（dc）和射频（rf)磁控溅射方式制作的含有锌目标al（1.5%含量）的高导电性和透明的掺杂zno（azo)薄膜。使用不同的技术，azo薄膜的结构，光学和电学性能在不同温度的退火处理（300和400℃下）显示不同的特征。实验 结果表明，AZO薄膜的性能可以通过退火处理进一步提高。经退火处理后ZnO薄膜的结晶性提高。直流与射频（RF）磁控溅射制备的AZO薄膜在可见光区域的透射率分别是80%和85%。直流磁控溅射制备AZO薄膜的电阻率在经过退火处理火可低至8.06×10-4Ω⋅cm。有人还发现，射频反应磁控溅射制备的AZO薄膜比直流磁控溅射的有更好的结构性和光学性
