热线式cvd沉积n型μc-si薄膜对于 μc-si/c-si同单晶硅异质结太阳能电池的应用 [外文翻.zip
热线式cvd沉积n型μc-si薄膜对于 μc-si/c-si同单晶硅异质结太阳能电池的应用 [外文翻,材料科学与工程 材料物理与化学，外文文献翻译及原文hot-wire cvd deposited n-type μc-si films for μc-si/c-siheterojunction solar cell applications热线式cvd沉积n型μc-si薄膜对于μc-si /同单晶硅异质结太阳能电池的应用...
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材料科学与工程 材料物理与化学，外文文献翻译及原文
Hot-wire CVD deposited n-type μc-Si films for μc-Si/c-Siheterojunction solar cell applications
热线式CVD沉积n型μc-Si薄膜对于μc-Si /同单晶硅异质结太阳能电池的应用
AbstractPhosphorous-doped microcrystalline silicon (μc-Si) films were prepared using hot-wire chemical vapor deposition (HWCVD). Structural,electrical and optical properties of these thin films were systematically studied as a function of PH3gas mixture ratio. We report recent results forp-type crystalline silicon-based heterojunction (HJ) solar cells using the HWCVD n-μc-Si film to form an n–p junction. The surface morphologyof the crystalline Si substrate after hydrogen treatment was examined using atomic force microscopy. A transfer length method was used to modifythe indium–tin–oxide (ITO) deposition parameters in order to reduce front ITO/n-μc-Si contact resistance. In our best solar cell sample (1 cm2)without any buffer layer, the conversion efficiency of 15.1% has been achieved with an open circuit voltage of 0.615 V, fill factor of 0.71 and shortcircuit current density of 34.6 mA/cm2under 100 mW/cm2condition. The spectral response of this cell will also be discussed.
摘 要
磷掺杂微晶硅(μc-Si)薄膜是准备使用热线化学汽相淀积(HWCVD)。电气结构,和光学性质这些薄膜系统的研究作为一个函数的PH 3气体混合比例。我们报告最近的结果p型晶体硅基异质结(HJ)太阳能电池使用HWCVD n-μc-Si膜形成一个np结。表面形貌的晶体硅基片上的氢被检查后治疗使用原子力显微镜。一个传输长度的方法被用来修改载(ITO)的沉积参数以减少ITO / n-μc-Si前接触电阻。在我们最好的太阳能电池样品(1cm2)没有任何缓冲层,转换效率为15.1%,取得了一个开放的电路电压0.615 V,填充系数为0.71和短电路电流密度34.6 mA /cm2，在100 mW /cm2条件。光谱响应的电池也会被讨论。
Hot-wire CVD deposited n-type μc-Si films for μc-Si/c-Siheterojunction solar cell applications
热线式CVD沉积n型μc-Si薄膜对于μc-Si /同单晶硅异质结太阳能电池的应用
AbstractPhosphorous-doped microcrystalline silicon (μc-Si) films were prepared using hot-wire chemical vapor deposition (HWCVD). Structural,electrical and optical properties of these thin films were systematically studied as a function of PH3gas mixture ratio. We report recent results forp-type crystalline silicon-based heterojunction (HJ) solar cells using the HWCVD n-μc-Si film to form an n–p junction. The surface morphologyof the crystalline Si substrate after hydrogen treatment was examined using atomic force microscopy. A transfer length method was used to modifythe indium–tin–oxide (ITO) deposition parameters in order to reduce front ITO/n-μc-Si contact resistance. In our best solar cell sample (1 cm2)without any buffer layer, the conversion efficiency of 15.1% has been achieved with an open circuit voltage of 0.615 V, fill factor of 0.71 and shortcircuit current density of 34.6 mA/cm2under 100 mW/cm2condition. The spectral response of this cell will also be discussed.
摘 要
磷掺杂微晶硅(μc-Si)薄膜是准备使用热线化学汽相淀积(HWCVD)。电气结构,和光学性质这些薄膜系统的研究作为一个函数的PH 3气体混合比例。我们报告最近的结果p型晶体硅基异质结(HJ)太阳能电池使用HWCVD n-μc-Si膜形成一个np结。表面形貌的晶体硅基片上的氢被检查后治疗使用原子力显微镜。一个传输长度的方法被用来修改载(ITO)的沉积参数以减少ITO / n-μc-Si前接触电阻。在我们最好的太阳能电池样品(1cm2)没有任何缓冲层,转换效率为15.1%,取得了一个开放的电路电压0.615 V,填充系数为0.71和短电路电流密度34.6 mA /cm2，在100 mW /cm2条件。光谱响应的电池也会被讨论。
