用透射电子显微镜调查直拉单晶硅中的微缺陷 [外文翻译].zip
用透射电子显微镜调查直拉单晶硅中的微缺陷 [外文翻译],材料科学与工程 材料物理与化学，外文文献翻译及原文transmission electron microscopy investigation of the micro-defectsin czochralski silicon用透射电子显微镜调查直拉单晶硅中的微缺陷a b s t r a c tthe influen...
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材料科学与工程 材料物理与化学，外文文献翻译及原文
Transmission electron microscopy investigation of the micro-defectsin Czochralski silicon
用透射电子显微镜调查直拉单晶硅中的微缺陷
a b s t r a c t
The influence of rapid thermal annealing (RTA) on the formation of oxygen precipitates and extendeddefects has been investigated by transmission electron microscopy (TEM) in heavily and lightly boron-doped Czochralski (Cz) silicon, respectively. It reveals that for the heavily doped specimen undergo RTApre-annealing, there are oxygen precipitates with high density generated, accompanied with the stackingfaults, while for the specimen without RTA pre-annealing, dislocation generated; as for the lightly dopedspecimen, it found that there are dislocations generated in the specimen undergo RTA pre-annealing,while oxygen precipitate-related dislocations generated in the specimen without RTA pre-annealing,respectively. The main reason is due to the enhancement of oxygen precipitation by heavy boron dopingand the increment of vacancy concentration in the bulk injected into the bulk by RTA pre-annealing.
摘要：快速热退火对重﹑轻掺硼直拉单晶（CZ）硅中氧沉淀物和扩展缺陷的影响已经分别使用透射电子显微镜调查研究过。它揭示了，对于重掺杂的试样经过快速热退火处理后，氧沉淀物产生的密度高，伴随着堆垛层错，而对于没有快速热退火处理的试样，也产生了位错；至于轻掺杂的试样，它显示有一些经过了快速热退火处理的样品中也产生了位错。而未经过快速热退火处理的样品氧沉淀物也产生了相关的位错。主要原因是由于在快速热退火中重硼掺杂和空位浓度增量使样品中氧沉淀物增强。
Transmission electron microscopy investigation of the micro-defectsin Czochralski silicon
用透射电子显微镜调查直拉单晶硅中的微缺陷
a b s t r a c t
The influence of rapid thermal annealing (RTA) on the formation of oxygen precipitates and extendeddefects has been investigated by transmission electron microscopy (TEM) in heavily and lightly boron-doped Czochralski (Cz) silicon, respectively. It reveals that for the heavily doped specimen undergo RTApre-annealing, there are oxygen precipitates with high density generated, accompanied with the stackingfaults, while for the specimen without RTA pre-annealing, dislocation generated; as for the lightly dopedspecimen, it found that there are dislocations generated in the specimen undergo RTA pre-annealing,while oxygen precipitate-related dislocations generated in the specimen without RTA pre-annealing,respectively. The main reason is due to the enhancement of oxygen precipitation by heavy boron dopingand the increment of vacancy concentration in the bulk injected into the bulk by RTA pre-annealing.
摘要：快速热退火对重﹑轻掺硼直拉单晶（CZ）硅中氧沉淀物和扩展缺陷的影响已经分别使用透射电子显微镜调查研究过。它揭示了，对于重掺杂的试样经过快速热退火处理后，氧沉淀物产生的密度高，伴随着堆垛层错，而对于没有快速热退火处理的试样，也产生了位错；至于轻掺杂的试样，它显示有一些经过了快速热退火处理的样品中也产生了位错。而未经过快速热退火处理的样品氧沉淀物也产生了相关的位错。主要原因是由于在快速热退火中重硼掺杂和空位浓度增量使样品中氧沉淀物增强。
