在毫秒激光辐射下的硅片表面损伤形态调查 [外文翻译].zip
在毫秒激光辐射下的硅片表面损伤形态调查 [外文翻译],材料科学与工程 材料物理与化学，外文文献翻译及原文surface damage morphology investigations of silicon under millisecondlaser irradiation在毫秒激光辐射下的硅片表面损伤形态调查a b s t r a c tthe surface dam...
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材料科学与工程 材料物理与化学，外文文献翻译及原文
Surface damage morphology investigations of silicon under millisecondlaser irradiation
在毫秒激光辐射下的硅片表面损伤形态调查
a b s t r a c t
The surface damage morphologies of single crystal silicon induced by 1064 nm millisecond Nd:YAG laserare investigated. After irradiation, the damage morphologies of silicon are inspected by optical micro-scope (OM) and atomic force microscope (AFM). The plasma emission spectra of the damaged region aredetected by the spectrometer. It is shown that surface oxidation and nitridation have occurred duringthe interaction of millisecond laser with silicon. In addition, the damage morphologies induced by 2 msand 10 ns pulse width laser are compared. The damage morphology obtained by 2 ms laser is an evidentcrater. Three types of damage morphologies are formed at different laser energy densities. The circularconcentric ripples are found surrounding the rim of the crater. The spacing of the ripples is 15 ± 5 m.Two types of cracks are observed: linear crack and circular crack. The linear crack is observed in thecenter of the damaged region which propagates to the periphery of the damaged region. The circularcrack is located at the rim of the crater. The damage morphology induced by 10 ns laser is surface layerdamage. The periodic linear waves are generated due to the interference between the incident beam andthe scattered beam. The spacing of the ripples is 1.54 m which is close to the incident laser wavelength1.064 m. The linear crack is located at the center of the damaged region. Furthermore, for the samelaser energy density, the dimension of the damaged region and the crater depth induced by 2 ms laserare greater than that of 10 ns laser. It indicates that the damage mechanism under millisecond pulse laserirradiation is strongly different from the case of nanosecond pulse laser.
摘要
由一个1064纳米的毫秒Nd∶YAG激光系统产生的单晶硅的表面损伤形貌正在被研究。在照射之后，硅片的破坏形态被光学显微镜(OM）和原子力显微镜(AFM)来进行检测。等离子体发射光谱的受损区域被光谱仪检测。结果表明,表面氧化和氮化在毫秒激光与硅片相互作用期间已经发生了。此外,由于2ms和10ns脉冲宽度激光产生的破坏形态相差无几。由2ms激光得到的损伤形态是一个明显的火山口。三种类型的破坏形态形成在不同激光能量密度。火山口形状周围边缘发现了圆形的同心波。间隔的涟漪是15±5米。两种类型的裂缝被观察到观察——线性裂纹和圆形裂纹。线性裂纹在中心地区的受损会传播到周边的受损区域可以被观测到。圆形的裂纹位于火山口的边缘。10 ns激光引起的损伤形貌是表层损伤。周期性的线性波生成是由于入射光之间的干涉和散落的梁。间隔的涟漪是1.54um ——这接近于接近事件的激光波长1.064um。线性裂纹位于受损地区的中心。此外,对于相同的激光能量密度，受损区域由2毫秒激光产生的尺寸和坑深度诱导比10纳秒激光器产生的更大。它表明,在毫秒脉冲激光下损伤机理与毫微秒脉冲激光器辐照下是强烈的不同。
Surface damage morphology investigations of silicon under millisecondlaser irradiation
在毫秒激光辐射下的硅片表面损伤形态调查
a b s t r a c t
The surface damage morphologies of single crystal silicon induced by 1064 nm millisecond Nd:YAG laserare investigated. After irradiation, the damage morphologies of silicon are inspected by optical micro-scope (OM) and atomic force microscope (AFM). The plasma emission spectra of the damaged region aredetected by the spectrometer. It is shown that surface oxidation and nitridation have occurred duringthe interaction of millisecond laser with silicon. In addition, the damage morphologies induced by 2 msand 10 ns pulse width laser are compared. The damage morphology obtained by 2 ms laser is an evidentcrater. Three types of damage morphologies are formed at different laser energy densities. The circularconcentric ripples are found surrounding the rim of the crater. The spacing of the ripples is 15 ± 5 m.Two types of cracks are observed: linear crack and circular crack. The linear crack is observed in thecenter of the damaged region which propagates to the periphery of the damaged region. The circularcrack is located at the rim of the crater. The damage morphology induced by 10 ns laser is surface layerdamage. The periodic linear waves are generated due to the interference between the incident beam andthe scattered beam. The spacing of the ripples is 1.54 m which is close to the incident laser wavelength1.064 m. The linear crack is located at the center of the damaged region. Furthermore, for the samelaser energy density, the dimension of the damaged region and the crater depth induced by 2 ms laserare greater than that of 10 ns laser. It indicates that the damage mechanism under millisecond pulse laserirradiation is strongly different from the case of nanosecond pulse laser.
摘要
由一个1064纳米的毫秒Nd∶YAG激光系统产生的单晶硅的表面损伤形貌正在被研究。在照射之后，硅片的破坏形态被光学显微镜(OM）和原子力显微镜(AFM)来进行检测。等离子体发射光谱的受损区域被光谱仪检测。结果表明,表面氧化和氮化在毫秒激光与硅片相互作用期间已经发生了。此外,由于2ms和10ns脉冲宽度激光产生的破坏形态相差无几。由2ms激光得到的损伤形态是一个明显的火山口。三种类型的破坏形态形成在不同激光能量密度。火山口形状周围边缘发现了圆形的同心波。间隔的涟漪是15±5米。两种类型的裂缝被观察到观察——线性裂纹和圆形裂纹。线性裂纹在中心地区的受损会传播到周边的受损区域可以被观测到。圆形的裂纹位于火山口的边缘。10 ns激光引起的损伤形貌是表层损伤。周期性的线性波生成是由于入射光之间的干涉和散落的梁。间隔的涟漪是1.54um ——这接近于接近事件的激光波长1.064um。线性裂纹位于受损地区的中心。此外,对于相同的激光能量密度，受损区域由2毫秒激光产生的尺寸和坑深度诱导比10纳秒激光器产生的更大。它表明,在毫秒脉冲激光下损伤机理与毫微秒脉冲激光器辐照下是强烈的不同。
