zno退火缓冲层在al2o3衬底上增长的外延膜的增强特性和结构特性 [外文翻译].zip
zno退火缓冲层在al2o3衬底上增长的外延膜的增强特性和结构特性 [外文翻译],材料科学与工程 材料物理与化学，外文文献翻译及原文中文2760字enhancement of the surface and structural properties of znoepitaxial films grown on al2o3substrates utilizing annealed znobuffer...
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原文档由会员 牛奶咖啡 发布
材料科学与工程 材料物理与化学，外文文献翻译及原文
中文2760字
Enhancement of the surface and structural properties of ZnOepitaxial films grown on Al2O3substrates utilizing annealed ZnObuffer layers
ZnO退火缓冲层在Al2O3衬底上增长的外延膜的增强特性和结构特性
Abstract
ZnO films were grown on Al2O3(1000) sub-strates without and with ZnO buffer layers by using radio-frequency magnetron sputtering. Atomic force microscopyimages showed that the surface roughness of the ZnO filmsgrown on ZnO buffer layers annealed in a vacuum was de-creased, indicative of an improvement in the ZnO surfaces.X-ray diffraction patterns showed that the crystallinity of theZnO thin films was enhanced by using the annealed ZnObuffer layer in comparison with the film grown on withouta buffer layer. The improvement of the surface and struc-tural properties of the ZnO films might be attributed to theformation of the Zn-face ZnO buffers due to annealing in avacuum. These results indicate that the surface and struc-tural properties of ZnO films grown on Al2O3substratesare improved by using ZnO buffer layers annealed in avacuum.
摘 要
通过使用射频磁控溅射，在有无ZnO缓冲层的条件下，在Al2O3（1000）衬底上生长ZnO薄膜。原子力显微镜图像显示，真空中退火，在ZnO缓冲层表面生长的ZnO薄膜表面粗糙度降低，反映了ZnO薄膜表面的改进。X射线衍射图表明在缓冲层上生长的ZnO薄膜通过退火后的结晶性比在无缓冲层生长的ZnO薄膜的结晶性要高。ZnO薄膜表面和结构性能的改进是由于在真空中退火形成的Zn面ZnO缓冲层。这些结果表明在Al2O3衬底上生长的ZnO薄膜表面和结构性能的提高是由于使用缓冲层在真空中退火。
中文2760字
Enhancement of the surface and structural properties of ZnOepitaxial films grown on Al2O3substrates utilizing annealed ZnObuffer layers
ZnO退火缓冲层在Al2O3衬底上增长的外延膜的增强特性和结构特性
Abstract
ZnO films were grown on Al2O3(1000) sub-strates without and with ZnO buffer layers by using radio-frequency magnetron sputtering. Atomic force microscopyimages showed that the surface roughness of the ZnO filmsgrown on ZnO buffer layers annealed in a vacuum was de-creased, indicative of an improvement in the ZnO surfaces.X-ray diffraction patterns showed that the crystallinity of theZnO thin films was enhanced by using the annealed ZnObuffer layer in comparison with the film grown on withouta buffer layer. The improvement of the surface and struc-tural properties of the ZnO films might be attributed to theformation of the Zn-face ZnO buffers due to annealing in avacuum. These results indicate that the surface and struc-tural properties of ZnO films grown on Al2O3substratesare improved by using ZnO buffer layers annealed in avacuum.
摘 要
通过使用射频磁控溅射，在有无ZnO缓冲层的条件下，在Al2O3（1000）衬底上生长ZnO薄膜。原子力显微镜图像显示，真空中退火，在ZnO缓冲层表面生长的ZnO薄膜表面粗糙度降低，反映了ZnO薄膜表面的改进。X射线衍射图表明在缓冲层上生长的ZnO薄膜通过退火后的结晶性比在无缓冲层生长的ZnO薄膜的结晶性要高。ZnO薄膜表面和结构性能的改进是由于在真空中退火形成的Zn面ZnO缓冲层。这些结果表明在Al2O3衬底上生长的ZnO薄膜表面和结构性能的提高是由于使用缓冲层在真空中退火。
