低温快速热处理制备多晶硅 [外文翻译].zip
低温快速热处理制备多晶硅 [外文翻译],材料科学与工程 材料物理与化学，外文文献翻译及原文crystallized si films by lowtemperature rapid thermal annealing ofamorphous silicon低温快速热处理制备多晶硅low~temperature rapid thermal annealing ...
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材料科学与工程 材料物理与化学，外文文献翻译及原文
Crystallized Si films by lowtemperature rapid thermal annealing ofamorphous silicon
低温快速热处理制备多晶硅
Low~temperature rapid thermal annealing has been used to crystallize both undoped anddoped amorphous silicon (a-SO films deposited at low temperatures. The poiycrystalline filmsproduced are completely crystallized with time~temperature budgets such as 4 min at 700°C.Unlike deposited polycrystalline Si films, the grain size in these crystallized films is not limitedby film thickness. In the case of undoped a-Si films crystallized by this approach, the resultingconductivity is comparable to that achieved in undoped polycrystaUine Si films produced bymuch higher processing temperatures. In the case of doped a-Si films, the resulting crystaHizedfilm yields a conductivity of 160 S/cm, a value which is comparable to the highest reported fordoped polycrystalline and microcrystalline silicon. These doped films are found to havemobility values of ~ 13 cm2IV s.
低温快速热处理技术在低温时结晶掺杂和非掺杂非晶硅的过程已经得到运用。不同于一般沉积多晶硅薄膜的技术，这些薄膜的晶粒尺寸并不受薄膜厚度的限制， 它的生长完全的取决于结晶时间和温度，如，4分钟700℃。就这种无参杂的非晶硅的而言，通过这种技术，其结果与在高温下沉积无参杂多晶硅的电导率相同。至于参杂的非晶硅薄膜，结晶后的电导率可达到 160 S/cm，比得上参杂的多晶硅和微晶硅的最高值，并且，这些结晶后的薄膜载流子迁移率可达 13 cm2 /V s。
Crystallized Si films by lowtemperature rapid thermal annealing ofamorphous silicon
低温快速热处理制备多晶硅
Low~temperature rapid thermal annealing has been used to crystallize both undoped anddoped amorphous silicon (a-SO films deposited at low temperatures. The poiycrystalline filmsproduced are completely crystallized with time~temperature budgets such as 4 min at 700°C.Unlike deposited polycrystalline Si films, the grain size in these crystallized films is not limitedby film thickness. In the case of undoped a-Si films crystallized by this approach, the resultingconductivity is comparable to that achieved in undoped polycrystaUine Si films produced bymuch higher processing temperatures. In the case of doped a-Si films, the resulting crystaHizedfilm yields a conductivity of 160 S/cm, a value which is comparable to the highest reported fordoped polycrystalline and microcrystalline silicon. These doped films are found to havemobility values of ~ 13 cm2IV s.
低温快速热处理技术在低温时结晶掺杂和非掺杂非晶硅的过程已经得到运用。不同于一般沉积多晶硅薄膜的技术，这些薄膜的晶粒尺寸并不受薄膜厚度的限制， 它的生长完全的取决于结晶时间和温度，如，4分钟700℃。就这种无参杂的非晶硅的而言，通过这种技术，其结果与在高温下沉积无参杂多晶硅的电导率相同。至于参杂的非晶硅薄膜，结晶后的电导率可达到 160 S/cm，比得上参杂的多晶硅和微晶硅的最高值，并且，这些结晶后的薄膜载流子迁移率可达 13 cm2 /V s。
