铁或铜掺杂的硅特性 [外文翻译].zip
铁或铜掺杂的硅特性 [外文翻译],材料科学与工程 材料物理与化学，外文文献翻译及原文properties of silicon doped with iron or copper铁或铜掺杂的硅特性iron introduces a donor level into silicon at 0.40 ev from theva lence band obs...
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材料科学与工程 材料物理与化学，外文文献翻译及原文
Properties of Silicon Doped with Iron or Copper
铁或铜掺杂的硅特性
Iron introduces a donor level into silicon at 0.40 ev from theva lence band observed both in crystals doped in the melt and incrystals into which iron was diffused at 1200'C. This level convertsanomalously to a level 0.55 ev from the conduction band onstanding at room temperature. The conversion is reversible inthe range~70'—200'C; above 200'C, the electrical activity ofiron irreversibly disappears. No evidence for acceptor action ofiron was found. The electrically active solubility of iron, 1.5&&10"cm'at 1200'C, is higher than the radiotracer solubility but theformer was measured in more rapidly quenched samples. Thedistribution coeS.cient is 8)(10 . Preferentialtrapping ofelectrons by iron centers was shown by Hall mobility measure-ments on optically-excited charge carriers. Lifetime studies bythe photoconductive decay method indicated a larger capturecross section for electrons than for holes.Copper introduced a donor level at 0.24 ev and an acceptorlevel at 0.49 ev, both as measured from the valence band. Themaximum electrical activity in quenched samples was 5X10'4cm'out of a total concentration of10"cm'at 1200'C. Infraredphotoconductivity spectra support the position of the deep levelsdue to iron and copper.The apparent lack of electrical activity or inconsistency inproducing a level is discussed for a number of other elements insilicon. Precipitation while cooling from high temperature isbelieved to reduce the soluble component of most of these ele-ments below the observable limit of~10'4cm'.
1200摄氏度0.40电子伏下从价带中观察不管是在熔体中的晶体掺杂还是铁扩散，都能发现硅中的铁引入了深能级。这个能级的转换异于在室温下0.55电子伏下导带的能级。在70摄氏度到200摄氏度是可逆的；超过200摄氏度，铁的电活性便完全的消失了。没有证据表明铁的受体作用被发现。铁的电活性溶解度，在1200摄氏度是1.5×1016，，它比放射性示踪剂的溶解度要高，但是前者是在更迅速淬火的样品中测试出来的。分配系数是8×10-6。优惠的铁中心的电子俘获能通过光激发载流子的霍尔迁移率的测量显示出来。少子寿命可以通过光电导衰减法来显示一个更大的俘获截面的电子比空穴。
铜在0.24电子伏能引进一个深能级和一个0.49电子伏下的受主能级，都作为测量的从价带。对打的点活动在淬火样品为5×1014㎝的1200摄氏度。红外光电导谱支持定位铁和铜的深能级的位置。电活动生产水平明显缺乏或不一致的讨论可以与其他硅中的元素一起。从高温冷却后的沉淀被认为可以去掉大部分低于可溶性成分观察限制~1014㎝-3的解释。
Properties of Silicon Doped with Iron or Copper
铁或铜掺杂的硅特性
Iron introduces a donor level into silicon at 0.40 ev from theva lence band observed both in crystals doped in the melt and incrystals into which iron was diffused at 1200'C. This level convertsanomalously to a level 0.55 ev from the conduction band onstanding at room temperature. The conversion is reversible inthe range~70'—200'C; above 200'C, the electrical activity ofiron irreversibly disappears. No evidence for acceptor action ofiron was found. The electrically active solubility of iron, 1.5&&10"cm'at 1200'C, is higher than the radiotracer solubility but theformer was measured in more rapidly quenched samples. Thedistribution coeS.cient is 8)(10 . Preferentialtrapping ofelectrons by iron centers was shown by Hall mobility measure-ments on optically-excited charge carriers. Lifetime studies bythe photoconductive decay method indicated a larger capturecross section for electrons than for holes.Copper introduced a donor level at 0.24 ev and an acceptorlevel at 0.49 ev, both as measured from the valence band. Themaximum electrical activity in quenched samples was 5X10'4cm'out of a total concentration of10"cm'at 1200'C. Infraredphotoconductivity spectra support the position of the deep levelsdue to iron and copper.The apparent lack of electrical activity or inconsistency inproducing a level is discussed for a number of other elements insilicon. Precipitation while cooling from high temperature isbelieved to reduce the soluble component of most of these ele-ments below the observable limit of~10'4cm'.
1200摄氏度0.40电子伏下从价带中观察不管是在熔体中的晶体掺杂还是铁扩散，都能发现硅中的铁引入了深能级。这个能级的转换异于在室温下0.55电子伏下导带的能级。在70摄氏度到200摄氏度是可逆的；超过200摄氏度，铁的电活性便完全的消失了。没有证据表明铁的受体作用被发现。铁的电活性溶解度，在1200摄氏度是1.5×1016，，它比放射性示踪剂的溶解度要高，但是前者是在更迅速淬火的样品中测试出来的。分配系数是8×10-6。优惠的铁中心的电子俘获能通过光激发载流子的霍尔迁移率的测量显示出来。少子寿命可以通过光电导衰减法来显示一个更大的俘获截面的电子比空穴。
铜在0.24电子伏能引进一个深能级和一个0.49电子伏下的受主能级，都作为测量的从价带。对打的点活动在淬火样品为5×1014㎝的1200摄氏度。红外光电导谱支持定位铁和铜的深能级的位置。电活动生产水平明显缺乏或不一致的讨论可以与其他硅中的元素一起。从高温冷却后的沉淀被认为可以去掉大部分低于可溶性成分观察限制~1014㎝-3的解释。
