热处理对多晶硅中的碳的影响_外文翻译.zip
热处理对多晶硅中的碳的影响_外文翻译,共7页 中翻英effect of heat treatment on carbon inmulticrystalline siliconeffect of heat treatment on carbon in cast multicrystalline silicon (mc-si) has been studied...
该文档为压缩文件,包含的文件列表如下:
内容介绍
原文档由会员 牛奶咖啡 发布
共7页 中翻英
Effect of heat treatment on carbon inmulticrystalline silicon
Effect of heat treatment on carbon in cast multicrystalline silicon (mc-Si) has been studiedby means of Fourier Transmission Infrared Spectroscopy. Carbon is found to be involved inthe formation of as-grown precipitates in mc-Si with higher oxygen content. The experimentalresults reveal that carbon is dif?cult to precipitate in mc-Si with lower oxygen or highernitrogen concentration during annealing in the temperature range from 4501C to 11501C.Carbon can enhance the nucleation of oxygen precipitates at lower temperature (o8501C).Although carbon does not affect the amount of oxygen precipitates at higher temperature(>9501C), it is suggested that carbon diffuses into oxygen precipitates by the enhancement ofsilicon self-interstitials. The experiments point out that preannealing at 7501C enhances thedecrease of substitute carbon concentration during subsequent annealing at
10501C.Dislocations and grain boundaries in mc-Si do not affect carbon thermal treatment properties.
热处理对铸型多晶硅（MC- Si）中的碳的影响已经由科学家通过傅里叶传输红外光谱手段研究出来了。碳被发现在更高的氧含量下能够参与微晶硅中的生长析出物的形成。实验结果表明，碳在450℃到1150℃的退火温度范围内，在较低氧气或更高氮气浓度下不利于微晶硅中析出物的形成。碳在较的温度（ 小于850℃ ）下可以提高氧沉淀物的形核率。虽然碳在较高的温度（大于950℃）下不影响氧沉淀物的量，但仍建议将碳扩散到氧沉淀物中以填充硅自身的间隙。实验指出，预退火温度为750℃以及随后的退火温度为1050℃的条件可以促进置换碳浓度的减少。位错和微晶硅的晶界不影响碳热处理性能。
Effect of heat treatment on carbon inmulticrystalline silicon
Effect of heat treatment on carbon in cast multicrystalline silicon (mc-Si) has been studiedby means of Fourier Transmission Infrared Spectroscopy. Carbon is found to be involved inthe formation of as-grown precipitates in mc-Si with higher oxygen content. The experimentalresults reveal that carbon is dif?cult to precipitate in mc-Si with lower oxygen or highernitrogen concentration during annealing in the temperature range from 4501C to 11501C.Carbon can enhance the nucleation of oxygen precipitates at lower temperature (o8501C).Although carbon does not affect the amount of oxygen precipitates at higher temperature(>9501C), it is suggested that carbon diffuses into oxygen precipitates by the enhancement ofsilicon self-interstitials. The experiments point out that preannealing at 7501C enhances thedecrease of substitute carbon concentration during subsequent annealing at
10501C.Dislocations and grain boundaries in mc-Si do not affect carbon thermal treatment properties.
热处理对铸型多晶硅（MC- Si）中的碳的影响已经由科学家通过傅里叶传输红外光谱手段研究出来了。碳被发现在更高的氧含量下能够参与微晶硅中的生长析出物的形成。实验结果表明，碳在450℃到1150℃的退火温度范围内，在较低氧气或更高氮气浓度下不利于微晶硅中析出物的形成。碳在较的温度（ 小于850℃ ）下可以提高氧沉淀物的形核率。虽然碳在较高的温度（大于950℃）下不影响氧沉淀物的量，但仍建议将碳扩散到氧沉淀物中以填充硅自身的间隙。实验指出，预退火温度为750℃以及随后的退火温度为1050℃的条件可以促进置换碳浓度的减少。位错和微晶硅的晶界不影响碳热处理性能。
