生长速率对于多晶硅微结构的影响_外文翻译.zip
生长速率对于多晶硅微结构的影响_外文翻译,共10页 英翻中the effect of the growth rate on the microstructureof multi-crystalline siliconthis paper presents an experimental study of the influence of the growth ...
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原文档由会员 牛奶咖啡 发布
共10页 英翻中
The effect of the growth rate on the microstructureof multi-crystalline silicon
This paper presents an experimental study of the influence of the growth rate on the microstructure ofmulti-crystalline silicon (mc-Si). Crystals with a diameter of 105 mm were grown from an inductivelyheated, well-mixed melt by the conventional vertical Bridgman technique. Axial and vertical samples wereprepared from the crystals to analyze the grain structure as well as the distribution of dislocations and precipitates. The results show that the growth rate influences the microstructure of the crystals mainly atthe beginning of the solidi?cation process. Growth with a low growth rate, for instance, favors theformation of radially elongated grains near the bottom of the crystal and suppresses the heterogeneousnucleation of SiC precipitates at the inner crucible wall. The effect on the grain shape is restricted to thebottom region of the crystals, whereas the precipitates are identi?ed to be the origin of dislocations ordislocation clusters propagating throughout the crystal during growth. As a consequence, the dislocationdensity in a slowly grown crystal is found to be signi?cantly lower than in a fast grown crystal.
本文提出了一项多晶硅晶体生长速率对微观结构影响的实验性的研究，直径105mm的晶体在感应加热并采用传统的垂直布里奇法，混合良好的熔体中生长。该样品轴向和垂直方向被用于分析晶粒的结构还有位错及沉积物的分布。结果表明生长速率对于晶体微观结构主要在于凝固过程开始的时候。例如，较慢的生长速率容易在晶体底部生长出放射状、细长的晶粒，同时会抑制碳化硅沉淀在坩埚壁上异质形核。对晶粒形状的影响只限于晶体的底部区域，然而，沉淀物被指出是晶体生长过程中遍及晶体内部的位错或者位错族增殖的起源。因而发现，缓慢生长的晶体的位错密度显著地低于快速生长的晶体。
The effect of the growth rate on the microstructureof multi-crystalline silicon
This paper presents an experimental study of the influence of the growth rate on the microstructure ofmulti-crystalline silicon (mc-Si). Crystals with a diameter of 105 mm were grown from an inductivelyheated, well-mixed melt by the conventional vertical Bridgman technique. Axial and vertical samples wereprepared from the crystals to analyze the grain structure as well as the distribution of dislocations and precipitates. The results show that the growth rate influences the microstructure of the crystals mainly atthe beginning of the solidi?cation process. Growth with a low growth rate, for instance, favors theformation of radially elongated grains near the bottom of the crystal and suppresses the heterogeneousnucleation of SiC precipitates at the inner crucible wall. The effect on the grain shape is restricted to thebottom region of the crystals, whereas the precipitates are identi?ed to be the origin of dislocations ordislocation clusters propagating throughout the crystal during growth. As a consequence, the dislocationdensity in a slowly grown crystal is found to be signi?cantly lower than in a fast grown crystal.
本文提出了一项多晶硅晶体生长速率对微观结构影响的实验性的研究，直径105mm的晶体在感应加热并采用传统的垂直布里奇法，混合良好的熔体中生长。该样品轴向和垂直方向被用于分析晶粒的结构还有位错及沉积物的分布。结果表明生长速率对于晶体微观结构主要在于凝固过程开始的时候。例如，较慢的生长速率容易在晶体底部生长出放射状、细长的晶粒，同时会抑制碳化硅沉淀在坩埚壁上异质形核。对晶粒形状的影响只限于晶体的底部区域，然而，沉淀物被指出是晶体生长过程中遍及晶体内部的位错或者位错族增殖的起源。因而发现，缓慢生长的晶体的位错密度显著地低于快速生长的晶体。
