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电力电子装置保护系统设计,1.2万字我自己原创的毕业论文，仅在本站独家提交，大家放心使用摘要: 在电力电子保护中，除了电力电子参数选择合适，驱动电路设计良好外，还必须采用合适的电路保护。近年来，随着我国电力电子基础技术的飞速发展，国家把淘汰低效高耗能产业列入了国民经济的发展战略，要求电力电子装置的输出性能越来越高，对保护...
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电力电子装置保护系统设计
1.2万字
我自己原创的毕业论文，仅在本站独家提交，大家放心使用
摘要: 在电力电子保护中，除了电力电子参数选择合适，驱动电路设计良好外，还必须采用合适的电路保护。近年来，随着我国电力电子基础技术的飞速发展，国家把淘汰低效高耗能产业列入了国民经济的发展战略，要求电力电子装置的输出性能越来越高，对保护的要求越来越高，对网侧电能质量影响愈发严格。为了保证系统运行的安全性和经济性，电力电子设备的保护已成为当前电力电子系统中迫切需要解决的问题。
绝缘栅极双极型晶体管(IGBT)是一种复合型器件，是新型电力电子器件的主流器件，对IGBT的驱动保护，使之可以安全可靠的运行来提高生产效率和经济效益及保证安全生产有重要意义。
EXB841和M57959L驱动芯片在国内使用较为广泛，本文选取这两种驱动芯片，对其工作原理进行了分析，并从性能上做了。选取M57959L作为驱动电路核心芯片，设计出一种应用电路。驱动电路主要应用光耦P521提高芯片M57959L的快速反应能力，同时选择以高速光耦6N137为IGBT的隔离电路，利用6N137具有温度、电流和电压补偿的功能来确保IGBT可靠安全工作的。针对M57959L的工作特性，以及IGBT保护特性，选择合适的器件以及参数。通过分析实验波形，M57959L驱动应用电路可以有效的消除减少外加电源对驱动电路的干扰，同时电路短路时有效的保护IGBT。
关键词：IGBT 驱动电路 过流保护 EXB841 M57959L 隔离电路
Design of Protection System of Power Electronic Devices
ABSTRACT: In power electronics protection, not only to select the appropriate power electronic parameters and a good driver circuit design, but also the appropriate circuit protection must be used. In recent years, with the rapid development of power electronics-based technologies,country included phasing out inefficient high energy-consuming in the development strategy of the national economy. The requirement of performance of output power electronic devices become more sophisticated and the protection of the increasingly high demand. In addition to these,the impact on the network side of power quality has also became more stringent. In order to ensure the safety of the system is running and economy, protection of power electronic devices has become an urgent problems needing to solve problems in power electronics.
Insulated gate bipolar transistor (IGBT) is a composite device, which is the mainstream of new power electronic devices.The protection of IGBT is to make it safe and reliable operation to improve productivity and ensure safety in production and economic significance.
EXB841 and M57959L driver chips are widely used in our country.This paper selects two driver chips, analyzing its operating principle and doing a simple comparison from the performance.Also, selecting M57959L as a driver circuit core chip and designing an application circuit.Driver circuit applys P521 optocoupler to improve the rapid response capabilities, as well as selecting high-speed optocoupler 6N137 as the isolation circuit for the IGBT. Using 6N137 with temperature, current and voltage compensation feature to ensure that IGBT can work safe and reliable. For operating characteristics M57959L and IGBT protection features, selecting appropriate devices and parameters. By analyzing the experimental waveforms, M57959L driver application circuit can effectively reduce the interference of external power supply to the drive circuit, effectively protect the IGBT when a short circuit at the same time.
Key word：IGBT driving circuit overcurrent protection EXB841 M57959L Isolation circuit
目 录
第一章IGBT驱动技术现状和保护以及驱动电路的要求 1
1.1 IGBT驱动技术现状 1
1.1.1 光耦合器 1
1.1.2 用脉冲变压器隔离驱动IGBT的三种方法 1
1.1.3 当前市场上的直接驱动和隔离驱动 2
1.2 IGBT的保护 3
1.2.1 过电流和短路保护 3
1.2.2 dv/dt保护 4
1.2.3 过热保护 5
1.3 IGBT驱动电路的要求 5
1.4本文主要工作 6
第二章 驱动芯片EXB841的原理分析和优化 7
2.1 EXB841的拓扑结构 7
2.2 EXB841的工作原理 8
2.3 EXB841存在的不足 10
2.4 解决EXB841不足之处的措施 11
2.5 本章小节 12
第三章 驱动芯片M57959L的原理分析和应用电路的设计 13
3.1 M57959L的拓扑结构 13
3.2 M57959L的工作原理 15
3.3 M5795L应用电路设计要求 15
3.4 驱动电路的总体设计 16
3.4.1 实验条件选择 17
3.5 IGBT的隔离电路原理图 17
3.6 以M57959L芯片为主的主驱动电路设计 20
3.6.1 元器件选择以及参数计算 21
3.7 实验结果分析 22
3.7.1 实验装置 22
3.7.2 实验波形分析 23
3.8 本章小结 27
第四章 总结与展望 28
4.1 研究总结 28
4.2 研究展望 28
致谢 30
参考文献 31
1.2万字
我自己原创的毕业论文，仅在本站独家提交，大家放心使用
摘要: 在电力电子保护中，除了电力电子参数选择合适，驱动电路设计良好外，还必须采用合适的电路保护。近年来，随着我国电力电子基础技术的飞速发展，国家把淘汰低效高耗能产业列入了国民经济的发展战略，要求电力电子装置的输出性能越来越高，对保护的要求越来越高，对网侧电能质量影响愈发严格。为了保证系统运行的安全性和经济性，电力电子设备的保护已成为当前电力电子系统中迫切需要解决的问题。
绝缘栅极双极型晶体管(IGBT)是一种复合型器件，是新型电力电子器件的主流器件，对IGBT的驱动保护，使之可以安全可靠的运行来提高生产效率和经济效益及保证安全生产有重要意义。
EXB841和M57959L驱动芯片在国内使用较为广泛，本文选取这两种驱动芯片，对其工作原理进行了分析，并从性能上做了。选取M57959L作为驱动电路核心芯片，设计出一种应用电路。驱动电路主要应用光耦P521提高芯片M57959L的快速反应能力，同时选择以高速光耦6N137为IGBT的隔离电路，利用6N137具有温度、电流和电压补偿的功能来确保IGBT可靠安全工作的。针对M57959L的工作特性，以及IGBT保护特性，选择合适的器件以及参数。通过分析实验波形，M57959L驱动应用电路可以有效的消除减少外加电源对驱动电路的干扰，同时电路短路时有效的保护IGBT。
关键词：IGBT 驱动电路 过流保护 EXB841 M57959L 隔离电路
Design of Protection System of Power Electronic Devices
ABSTRACT: In power electronics protection, not only to select the appropriate power electronic parameters and a good driver circuit design, but also the appropriate circuit protection must be used. In recent years, with the rapid development of power electronics-based technologies,country included phasing out inefficient high energy-consuming in the development strategy of the national economy. The requirement of performance of output power electronic devices become more sophisticated and the protection of the increasingly high demand. In addition to these,the impact on the network side of power quality has also became more stringent. In order to ensure the safety of the system is running and economy, protection of power electronic devices has become an urgent problems needing to solve problems in power electronics.
Insulated gate bipolar transistor (IGBT) is a composite device, which is the mainstream of new power electronic devices.The protection of IGBT is to make it safe and reliable operation to improve productivity and ensure safety in production and economic significance.
EXB841 and M57959L driver chips are widely used in our country.This paper selects two driver chips, analyzing its operating principle and doing a simple comparison from the performance.Also, selecting M57959L as a driver circuit core chip and designing an application circuit.Driver circuit applys P521 optocoupler to improve the rapid response capabilities, as well as selecting high-speed optocoupler 6N137 as the isolation circuit for the IGBT. Using 6N137 with temperature, current and voltage compensation feature to ensure that IGBT can work safe and reliable. For operating characteristics M57959L and IGBT protection features, selecting appropriate devices and parameters. By analyzing the experimental waveforms, M57959L driver application circuit can effectively reduce the interference of external power supply to the drive circuit, effectively protect the IGBT when a short circuit at the same time.
Key word：IGBT driving circuit overcurrent protection EXB841 M57959L Isolation circuit
目 录
第一章IGBT驱动技术现状和保护以及驱动电路的要求 1
1.1 IGBT驱动技术现状 1
1.1.1 光耦合器 1
1.1.2 用脉冲变压器隔离驱动IGBT的三种方法 1
1.1.3 当前市场上的直接驱动和隔离驱动 2
1.2 IGBT的保护 3
1.2.1 过电流和短路保护 3
1.2.2 dv/dt保护 4
1.2.3 过热保护 5
1.3 IGBT驱动电路的要求 5
1.4本文主要工作 6
第二章 驱动芯片EXB841的原理分析和优化 7
2.1 EXB841的拓扑结构 7
2.2 EXB841的工作原理 8
2.3 EXB841存在的不足 10
2.4 解决EXB841不足之处的措施 11
2.5 本章小节 12
第三章 驱动芯片M57959L的原理分析和应用电路的设计 13
3.1 M57959L的拓扑结构 13
3.2 M57959L的工作原理 15
3.3 M5795L应用电路设计要求 15
3.4 驱动电路的总体设计 16
3.4.1 实验条件选择 17
3.5 IGBT的隔离电路原理图 17
3.6 以M57959L芯片为主的主驱动电路设计 20
3.6.1 元器件选择以及参数计算 21
3.7 实验结果分析 22
3.7.1 实验装置 22
3.7.2 实验波形分析 23
3.8 本章小结 27
第四章 总结与展望 28
4.1 研究总结 28
4.2 研究展望 28
致谢 30
参考文献 31
